?
Semiconductor Components Industries, LLC, 2009
January, 2009 ?
Rev. 0
Publication Order Number:
BAW56M3/D
1
BAW56M3T5G
Dual Switching Diode
Common Anode
The BAW56M3T5G device is a spin?off of our popular SOT?23
three?leaded device. It is designed for switching applications and is
housed in the SOT?723 surface mount package. This device is ideal
for low?power surface mount applications where board space is at a
premium.
Features
?
Reduces Board Space
?
This is a Halide?Free Device
?
This is a Pb?Free Device
MAXIMUM RATINGS
(EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
75
Vdc
Forward Current
IF
200
mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
FR?5 Board (Note 1)
TA
= 25
°C
Derate above 25°C
PD
265
2.1
mW
mW/°C
Thermal Resistance,
Junction?to?Ambient
RJA
470
°C/W
Total Device Dissipation
Alumina Substrate, (Note 2) TA
= 25
°C
Derate above 25°C
PD
640
5.1
mW
mW/°C
Thermal Resistance,
Junction?to?Ambient
RJA
195
°C/W
Junction and Storage Temperature
TJ, Tstg
?55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR?5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
70 V
DUAL COMMON ANODE
SWITCHING DIODE
Device Package Shipping?
ORDERING INFORMATION
BAW56M3T5G SOT?723
(Pb?Free)
8000/Tape & Reel
SOT?723
CASE 631AA
STYLE 4
MARKING
DIAGRAM
http://onsemi.com
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
AN = Specific Device Code
M = Date Code
AN M
1
3
2
1
ANODE
3
CATHODE
1
2
CATHODE
发布紧急采购，3分钟左右您将得到回复。
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